QUALCOMM Incorporated
Compute-in-memory dynamic random access memory

Abstract:

A compute-in-memory dynamic random access memory bitcell is provided that includes a first transistor having an on/off state controlled by a weight bit stored across a capacitor. The first transistor is in series with a current-source transistor connected between the first transistor and a read bit line. An activation voltage controls whether the current-source transistor conducts a current when the first transistor is in the on state.