QUALCOMM Incorporated
NANOSHEET (NS) AND FIN FIELD-EFFECT TRANSISTOR (FINFET) HYBRID INTEGRATION

Abstract:

Certain aspects of the present disclosure are directed to a semiconductor device. The semiconductor device generally includes a substrate, at least one silicon-on-insulator (SOI) transistor disposed above the substrate, a gate-all-around (GAA) transistor disposed above the substrate, and a fin field-effect transistor (FinFET) disposed above the substrate.