QUALCOMM Incorporated
INTEGRATED DEVICE WITH ELECTROMAGNETIC SHIELD

Last updated:

Abstract:

Improve EM coupling for the wafer-bonding process from a first wafer to a second wafer by a shielding technique. Examples may include building an EM shield implemented by BEOL-stacks/routings, bonding contacts, and TSVs for a closed-loop shielding platform for the integrated device to minimize EM interference from active devices due to eddy currents. The shield may be implemented in the active device layer during a wafer-to-wafer bonding-process that uses two different device layers/wafers, an active device layer/wafer and a passive device layer/wayer. The shield may be designed by the patterned routings for both I/O ports and the GND contacts.

Status:
Grant
Type:

Utility

Filling date:

6 Dec 2019

Issue date:

10 Jun 2021