Silicon Laboratories Inc.
High-voltage tolerant bi-directional electrostatic discharge protection circuit

Abstract:

In an embodiment, an apparatus includes: a signal pad; a first diode having a first terminal coupled to the signal pad and a second terminal, the first diode having a first polarity; a second diode having a second terminal coupled to the signal pad and a first terminal, the second diode having a second polarity; a first insulated gate bipolar transistor (IGBT) having a first polarity, the first IGBT coupled between the second terminal of the first diode and a reference voltage node; and a second IGBT having the first polarity, the second IGBT coupled between the first terminal of the second diode and the reference voltage node.