Silicon Laboratories Inc.
Apparatus with Electronic Circuitry Having Reduced Leakage Current and Associated Methods

Abstract:

An apparatus includes an integrated circuit (IC), which includes complementary metal oxide semiconductor (CMOS) circuitry. The CMOS circuitry includes a p-channel transistor network that includes at least one p-channel transistor having a gate-induced drain leakage (GIDL) current. The IC further includes a native metal oxide semiconductor (MOS) transistor coupled to supply a bias voltage to the at least one p-channel transistor to reduce the GIDL current of the at least one p-channel transistor.