Synopsys, Inc.
ELECTRO-THERMAL METHOD TO MANUFACTURE MONOCRYSTALLINE VERTICALLY ORIENTED SILICON CHANNELS FOR THREE-DIMENSIONAL (3D) NAND MEMORIES

Abstract:

A method of forming a multitude of vertical NAND memory cells, includes, in part, forming a multitude of insulating materials on a silicon substrate, forming a trench in the insulating materials to expose a surface of the silicon substrate, depositing a layer of polysilicon along the sidewalls of the trench, filling the trench with oxide, forming a metal layer above the trench, and forming a mono-crystalline channel for the NAND memory cells by applying a voltage between the silicon substrate and the metal layer to cause the polysilicon sidewalls to melt. The melted polysilicon sidewalls is enable to recrystallize into the mono-crystalline channel.