Synopsys, Inc.
Parameter generation for semiconductor device trapped-charge modeling

Abstract:

A method for generating semiconductor device model parameters includes receiving semiconductor device performance data of statistical instances of semiconductor devices, for a plurality of areal trapped charge densities Model parameters are extracted to produce individual model instances, each corresponding to the respective statistical instances for the areal trapped charge densities. Statistics of the extracted model parameters are modeled by processing the individual model instances to determine, for each areal trapped charge density, moments describing non-normal marginal distributions of the extracted model parameters and correlations between the extracted model parameters. Semiconductor device model parameters are generated for use in simulating a circuit using the determined moments and the determined correlations, for a selected areal trapped charge density.