Sony Group Corporation
SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE

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Abstract:

The present technology relates to a solid-state imaging device and an electronic device capable of improving a saturation characteristic. A photo diode is formed on a substrate, and a floating diffusion accumulates a signal charge read from the photo diode. A plurality of vertical gate electrodes is formed from a surface of the substrate in a depth direction in a region between the photo diode and the floating diffusion, and an overflow path is formed in a region interposed between a plurality of vertical gate electrodes. The present technology may be applied to a CMOS image sensor.

Status:
Application
Type:

Utility

Filling date:

2 Nov 2021

Issue date:

24 Feb 2022