Sony Group Corporation
SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE
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Abstract:
The present technology relates to a solid-state imaging device and an electronic device capable of improving a saturation characteristic. A photo diode is formed on a substrate, and a floating diffusion accumulates a signal charge read from the photo diode. A plurality of vertical gate electrodes is formed from a surface of the substrate in a depth direction in a region between the photo diode and the floating diffusion, and an overflow path is formed in a region interposed between a plurality of vertical gate electrodes. The present technology may be applied to a CMOS image sensor.
Status:
Application
Type:
Utility
Filling date:
2 Nov 2021
Issue date:
24 Feb 2022