Sony Group Corporation
IMAGING ELEMENT, STACKED IMAGING ELEMENT AND SOLID-STATE IMAGING DEVICE, AND METHOD OF MANUFACTURING IMAGING ELEMENT

Abstract:

An imaging element includes a photoelectric conversion section 23 including a first electrode 21, a photoelectric conversion layer 23A including an organic material, and a second electrode 22 that are stacked. An inorganic oxide semiconductor material layer 23B including a first layer 23C and a second layer 23D, from side of the first electrode, is formed between the first electrode 21 and the photoelectric conversion layer 23A, and .rho..sub.1.gtoreq.5.9 g/cm.sup.3 and .rho..sub.1-.rho..sub.2.gtoreq.0.1 g/cm.sup.3 are satisfied, where .rho..sub.1 is an average film density of the first layer 23C and .rho..sub.2 is an average film density of the second layer 23D in a portion extending for 3 nm from an interface between the first electrode 21 and the inorganic oxide semiconductor material layer 23B.