Sony Group Corporation
IMAGING ELEMENT, STACKED IMAGING ELEMENT AND SOLID-STATE IMAGING DEVICE, AND METHOD OF MANUFACTURING IMAGING ELEMENT

Abstract:

An imaging element of the present disclosure includes a photoelectric conversion section including a first electrode 21, a photoelectric conversion layer 23A including an organic material, and a second electrode 22 that are stacked; an inorganic semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A; and a value .DELTA.EN (=EN.sub.anion-EN.sub.cation) is less than 1.695, and preferably 1.624 or less, which results from subtracting an average value EN.sub.cation of electronegativities of cationic species included in the inorganic semiconductor material layer from an average value EN.sub.anion of electronegativities of anionic species included in the inorganic semiconductor material layer 23B.