Sony Group Corporation
IMAGING ELEMENT, STACKED IMAGING ELEMENT AND SOLID-STATE IMAGING DEVICE, AND INORGANIC OXIDE SEMICONDUCTOR MATERIAL

Abstract:

An imaging element includes a photoelectric conversion section including a first electrode 21, a photoelectric conversion layer 23A including an organic material, and a second electrode 22 that are stacked; an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A; and when a composition of an inorganic oxide semiconductor material included in the inorganic oxide semiconductor material layer 23B is represented by M.sub.aN.sub.bSn.sub.cO (where M denotes an aluminum (Al) atom, and N denotes a gallium atom (Ga) or a zinc (Zn) atom, or a gallium (Ga) atom and a zinc (Zn) atom), a+b+c=1.00, 0.01.ltoreq.a.ltoreq.0.04, and b<c are satisfied.