Sony Group Corporation
COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE

Abstract:

A complementary transistor is constituted of a first transistor TR.sub.1 and a second transistor TR.sub.2, active regions 32, 42 of the respective transistors are formed by layering first A layers 33, 43 and the first B layers 35, 45 respectively, surface regions 20.sub.1, 20.sub.2 provided in a base correspond to first A layers 33, 43 respectively, first B layers 35, 45 each have a conductivity type different from that of the first A layers 33, 43, and extension layers 36, 46 of the first B layer are provided on insulation regions 21.sub.1,21.sub.2 respectively.