Tower Semiconductor Ltd.
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

Abstract:

The semiconductor device includes: a gate electrode on a semiconductor substrate via a gate insulating film; an offset drain layer in the semiconductor substrate on one side of the gate electrode; a drain layer on the offset drain layer; and a source layer in the semiconductor substrate on another side of the gate electrode. The semiconductor device further includes: a protective film covering the semiconductor substrate; a field plate on the protective film, and having a portion above the offset drain layer; and a field plug connected to the field plate and in the protective film and above the offset drain layer, in such a manner as to avoid reaching the offset drain layer.