Tower Semiconductor Ltd.
SOLID-STATE IMAGING DEVICE
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Abstract:
A solid-state imaging device includes a first semiconductor substrate, photoelectric conversion portions arrayed on the first semiconductor substrate and configured to convert incident light to charges, a charge storage portion configured to hold charges transferred from a corresponding one of the photoelectric conversion portions via a transfer transistor, and an interconnect layer stacked on the first semiconductor substrate and including a plurality of metal interconnects. The incident light enters the first semiconductor substrate from a back surface side that is an opposite side to the interconnect layer. The solid-state imaging device further includes a light absorbing film between the photoelectric conversion portions and the metal interconnects.
Utility
23 Aug 2021
24 Feb 2022