Tower Semiconductor Ltd.
Radiation sensor

Abstract:

A radiation sensor that may include a first transistor, a first isolated conductive structure that comprises a floating gate of the first transistor, a first group of radiation sensing diodes that are coupled to each other, wherein the first group is configured to convert sensed radiation that is sensed by the first group to a first output signal, and to change a state of the first isolated conductive structure using the first output signal, a second transistor, a second isolated conductive structure that comprises a floating gate of the second transistor, and a second group of radiation sensing diodes that are coupled to each other, wherein the second group is configured to convert sensed radiation that is sensed by the second group to a second output signal, and to change a state, under a control of the first transistor, of the second isolated conductive structure using the second output signal.