Tower Semiconductor Ltd.
Apparatus, system and method of a metal-oxide-semiconductor (MOS) transistor including a split-gate structure

Abstract:

Some demonstrative embodiments include a Metal-Oxide-Semiconductor (MOS) transistor including a split-gate structure. For example, an Integrated Circuit (IC) may include a MOS including a body; a source; a drain; and a split-gate structure including a control gate and at least one voltage-controlled Field-Plate (FP), the control gate is between the source and the voltage-controlled FP, the voltage-controlled FP is between the control gate and the drain, the control gate configured to switch the MOS transistor between an on state and an off state according to a switching voltage; and a voltage controller configured to apply a variable control voltage to the voltage-controlled FP, the variable control voltage based on at least one control parameter, the at least one control parameter including at least one of a load current driven by the MOS transistor or a switching frequency of the switching voltage.