Tower Semiconductor Ltd.
APPARATUS, SYSTEM AND METHOD OF AN ELECTROSTATICALLY FORMED NANOWIRE (EFN)

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Abstract:

For example, an Electrostatically Formed Nanowire (EFN) may include a source region; at least one drain region; a wire region configured to drive a current between the source and drain regions via a conductive channel; a first lateral-gate area extending along a first surface of the wire region between the source and drain regions; a second lateral-gate area extending along a second surface of the wire region between the source and drain regions; and a sensing area in opening in a backside of a silicon substrate under the wire region and the first and second lateral-gate areas, the sensing area configured to, in reaction to a predefined substance, cause a change in a conductivity of the conductive channel.

Status:
Application
Type:

Utility

Filling date:

20 Sep 2018

Issue date:

26 Mar 2020