Taiwan Semiconductor Manufacturing Company Limited
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

Abstract:

A semiconductor device includes a first conductive feature and a second conductive feature. A first passivation layer is positioned between the first conductive feature and the second conductive feature. A second passivation layer is positioned between the first conductive feature and the second conductive feature and over the first passivation layer. A lowermost portion of an interface where the first passivation layer contacts the second passivation layer is positioned below 40% or above 60% of a height of the first conductive feature.