Taiwan Semiconductor Manufacturing Company Limited
 SEMICONDUCTOR DEVICE AND METHOD OF MAKING
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Abstract:
A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.
Status: 
 
                        Application 
Type: 
 Utility
Filling date: 
 27 Feb 2020
Issue date: 
2 Sep 2021