Taiwan Semiconductor Manufacturing Company Limited
SEMICONDUCTOR DEVICE AND METHOD OF MAKING

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Abstract:

A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.

Status:
Application
Type:

Utility

Filling date:

27 Feb 2020

Issue date:

2 Sep 2021