Taiwan Semiconductor Manufacturing Company Limited
Systems and Methods for Protecting a Semiconductor Device
Last updated:
Abstract:
Circuits and methods for protecting a device are provided. A first device to be protected includes a gate dielectric of a first thickness. A second device includes a gate dielectric of a second thickness that is less than the first thickness. A gate is shared by the first device and the second device.
Status:
Application
Type:
Utility
Filling date:
3 Jun 2021
Issue date:
16 Sep 2021