Taiwan Semiconductor Manufacturing Company Limited
 Systems and Methods for Protecting a Semiconductor Device
 Last updated:
Abstract:
Circuits and methods for protecting a device are provided. A first device to be protected includes a gate dielectric of a first thickness. A second device includes a gate dielectric of a second thickness that is less than the first thickness. A gate is shared by the first device and the second device.
Status: 
 
                        Application 
Type: 
 Utility
Filling date: 
 3 Jun 2021
Issue date: 
16 Sep 2021