Taiwan Semiconductor Manufacturing Company Limited
CAPACITOR STRUCTURE AND METHOD OF MAKING THE SAME

Abstract:

A structure includes a semiconductor substrate, a conductor-insulator-conductor capacitor. The conductor-insulator-conductor capacitor is disposed on the semiconductor substrate and includes a first conductor, a nitrogenous dielectric layer and a second conductor. The nitrogenous dielectric layer is disposed on the first conductor and the second conductor is disposed on the nitrogenous dielectric layer.