Taiwan Semiconductor Manufacturing Company Limited
Semiconductor arrangement and method of manufacture

Abstract:

A semiconductor arrangement includes a well region, a transistor over the well region, a conductive line in conductive contact with a first source/drain region of the transistor and having a sidewall in conductive contact with a sidewall of the well region, and a liner layer disposed between the sidewall of the conductive line and the sidewall of the well region. A method includes forming a well region in a semiconductor layer. A first fin and a second fin are formed over the well region. A first spacer is formed on the first fin and a second spacer is formed on the second fin. A portion of the well region positioned between the first spacer and the second spacer is removed to define a trench. A liner layer is formed in the trench, and a conductive line is formed in the trench over the liner layer. The conductive line conductively contacts the well region.