Taiwan Semiconductor Manufacturing Company Limited
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING
Last updated:
Abstract:
A semiconductor arrangement is provided. The semiconductor arrangement includes a first component in a substrate. The semiconductor arrangement includes a gap fill layer. A first portion of the gap fill layer overlies the first component. The first portion of the gap fill layer has a tapered sidewall. A first portion of the substrate separates the first portion of the gap fill layer from the first component.
Status:
Application
Type:
Utility
Filling date:
21 May 2020
Issue date:
25 Nov 2021