Taiwan Semiconductor Manufacturing Company Limited
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING

Last updated:

Abstract:

A semiconductor arrangement is provided. The semiconductor arrangement includes a first component in a substrate. The semiconductor arrangement includes a gap fill layer. A first portion of the gap fill layer overlies the first component. The first portion of the gap fill layer has a tapered sidewall. A first portion of the substrate separates the first portion of the gap fill layer from the first component.

Status:
Application
Type:

Utility

Filling date:

21 May 2020

Issue date:

25 Nov 2021