Taiwan Semiconductor Manufacturing Company Limited
 SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING
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Abstract:
A semiconductor arrangement is provided. The semiconductor arrangement includes a first component in a substrate. The semiconductor arrangement includes a gap fill layer. A first portion of the gap fill layer overlies the first component. The first portion of the gap fill layer has a tapered sidewall. A first portion of the substrate separates the first portion of the gap fill layer from the first component.
Status: 
 
                        Application 
Type: 
 Utility
Filling date: 
 21 May 2020
Issue date: 
25 Nov 2021