Taiwan Semiconductor Manufacturing Company Limited
VIA STRUCTURE AND METHODS FOR FORMING THE SAME

Abstract:

Vias and methods of making the same. The vias including a middle portion located in a via opening in an interconnect-level dielectric layer, a top portion including a top head that extends above the via opening and extends laterally beyond upper edges of the via opening and a bottom portion including a bottom head that extends below the via opening and extends laterally beyond lower edges of the via opening. The via may be formed from a refractory material.