Taiwan Semiconductor Manufacturing Company Limited
ONE-TIME-PROGRAMMABLE MEMORY DEVICE INCLUDING AN ANTIFUSE STRUCTURE AND METHODS OF FORMING THE SAME

Abstract:

A one time programmable memory device includes a field effect transistor and an antifuse structure. A first node of the antifuse structure includes, or is electrically connected to, the drain region of the field effect transistor. The antifuse structure includes an antifuse dielectric layer and a second node on, or over, the antifuse dielectric layer. One of the first node and the second node includes the drain region or a metal via structure formed within a via cavity extending through an interlayer dielectric material layer that overlies the field effect transistor.