Taiwan Semiconductor Manufacturing Company Limited
HETEROSTRUCTURE OXIDE SEMICONDUCTOR VERTICAL GATE-ALL-AROUND (VGAA) TRANSISTOR AND METHODS FOR MAKING THE SAME

Abstract:

A semiconductor transistor comprises a channel structure comprising a channel region and two source/drain regions located on respective sides of the channel region, wherein the channel region and the two source/drain regions are stacked up along a first direction. A gate structure surrounds the channel region.