Taiwan Semiconductor Manufacturing Company Limited
FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME

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Abstract:

Embodiments include structures and methods for fabricating an MFM capacitor having a plurality of metal contacts. An embodiment may include a first metal strip, disposed on a substrate and extending in a first direction, a ferroelectric blanket layer, disposed on the first metal strip, a second metal strip, disposed on the ferroelectric blanket layer and extending in a second direction different from the first direction, and a plurality of metal contacts disposed between the first metal strip and the second metal strip and located within an intersection region of the first metal strip and the second metal strip.

Status:
Application
Type:

Utility

Filling date:

5 Apr 2021

Issue date:

2 Dec 2021