Taiwan Semiconductor Manufacturing Company Limited
HIGH DENSITY MEMORY DEVICES WITH LOW CELL LEAKAGE AND METHODS FOR FORMING THE SAME

Abstract:

A memory device including a first array of rail structures that extend along a first horizontal direction, in which each of the rail structures are formed to serve as a bottom electrode, and a second array of rail structures that laterally extend along a second horizontal direction and are laterally spaced apart along the first horizontal direction. Each of the rail structures in the second array are formed to server as a top electrode. The memory device also includes a continuous dielectric memory layer located between the first array of rail structures and the second array of rail structures. The continuous dielectric memory layer providing protection from current leakage between the rail structures of the first array and the rail structures of the second array.