Taiwan Semiconductor Manufacturing Company Limited
MEMORY CELL WITH LOW RESISTANCE TOP ELECTRODE CONTACT AND METHODS FOR FORMING THE SAME

Abstract:

A magnetic tunnel junction (MTJ) memory cell comprising a connection via structure, a bottom electrode disposed on the connection via structure, a memory material stack disposed on the bottom electrode, and a conductive contact structure disposed on the memory material stack, in which a bottom surface of the conductive contact structure is in direct contact with a memory material layer of the memory material stack.