Taiwan Semiconductor Manufacturing Company Limited
FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE USING A MAGNESIUM OXIDE TUNNELING DIELECTRIC AND METHODS FOR FORMING THE SAME

Abstract:

A ferroelectric tunnel junction (FTJ) memory device includes a bottom electrode located over a substrate, a top electrode overlying the bottom electrode, and a ferroelectric tunnel junction memory element located between the bottom electrode and the top electrode. The ferroelectric tunnel junction memory element includes at least one ferroelectric material layer and at least one tunneling dielectric layer.