Taiwan Semiconductor Manufacturing Company Limited
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

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Abstract:

A semiconductor device includes a first active fin structure and a second active fin structure extending along a first lateral direction. The semiconductor device includes a dummy fin structure, also extending along the first lateral direction, that is disposed between the first active fin structure and the second fin structure. The dummy fin structure includes a material that is configured to induce mechanical deformation of a first source/drain structure coupled to an end of the first active fin structure and a second source/drain structure coupled to an end of the second active fin structure.

Status:
Application
Type:

Utility

Filling date:

10 Jul 2020

Issue date:

13 Jan 2022