Taiwan Semiconductor Manufacturing Company Limited
MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Abstract:

A memory device includes a first transistor formed in a first region of a substrate. The first transistor includes a structure protruding from the substrate, and a first source/drain (S/D) structure coupled to a first end of the protruding structure. The memory device includes a second transistor formed in a second region of the substrate. The second transistor includes a number of first semiconductor layers that are vertically spaced apart from one another, a second S/D structure coupled to a first end of the first semiconductor layers; and a third S/D structure coupled to a second end of the first semiconductor layers. The first region and the second region are laterally separated from each other by an isolation structure.