Taiwan Semiconductor Manufacturing Company Limited
Semiconductor device with spacers for self aligned vias
Last updated:
Abstract:
A semiconductor device includes a first conductive structure. The semiconductor device includes a first dielectric structure. The semiconductor device includes a second conductive structure. The first dielectric structure is positioned between a first surface of the first conductive structure and a surface of the second conductive structure. The semiconductor device includes an etch stop layer overlaying the first conductive structure. The semiconductor device includes a first spacer structure overlaying the first dielectric structure. The semiconductor device includes a second dielectric structure overlaying the first spacer structure and the etch stop layer.
Status:
Grant
Type:
Utility
Filling date:
31 Oct 2019
Issue date:
1 Mar 2022