Taiwan Semiconductor Manufacturing Company Limited
 SEMICONDUCTOR ARRANGEMENT AND METHOD FOR MAKING
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Abstract:
A method for fabricating a semiconductor arrangement includes performing a first etching of a semiconductive structure to expose a first portion of a sidewall of a first layer adjacent the semiconductive structure. The first etching forms a first protective layer on the first portion of the sidewall of the first layer, and the first protective layer is formed from a first accumulation of by-product material formed from an etchant of the first etching interacting with the semiconductive structure. The method includes performing a first flash to remove at least some of the first protective layer.
Status: 
 
                        Application 
Type: 
 Utility
Filling date: 
 6 Dec 2021
Issue date: 
24 Mar 2022