Taiwan Semiconductor Manufacturing Company Limited
SEMICONDUCTOR DEVICE WITH SPACERS FOR SELF ALIGNED VIAS
Last updated:
Abstract:
A semiconductor device includes a first conductive structure. The semiconductor device includes a first dielectric structure. The semiconductor device includes a second conductive structure. The first dielectric structure is positioned between a first surface of the first conductive structure and a surface of the second conductive structure. The semiconductor device includes an etch stop layer overlaying the first conductive structure. The semiconductor device includes a first spacer structure overlaying the first dielectric structure. The semiconductor device includes a second dielectric structure overlaying the first spacer structure and the etch stop layer.
Status:
Application
Type:
Utility
Filling date:
28 Feb 2022
Issue date:
9 Jun 2022