Taiwan Semiconductor Manufacturing Company Limited
SEMICONDUCTOR DEVICE WITH SPACERS FOR SELF ALIGNED VIAS

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Abstract:

A semiconductor device includes a first conductive structure. The semiconductor device includes a first dielectric structure. The semiconductor device includes a second conductive structure. The first dielectric structure is positioned between a first surface of the first conductive structure and a surface of the second conductive structure. The semiconductor device includes an etch stop layer overlaying the first conductive structure. The semiconductor device includes a first spacer structure overlaying the first dielectric structure. The semiconductor device includes a second dielectric structure overlaying the first spacer structure and the etch stop layer.

Status:
Application
Type:

Utility

Filling date:

28 Feb 2022

Issue date:

9 Jun 2022