Taiwan Semiconductor Manufacturing Company Limited
SEMICONDUCTOR DEVICE

Abstract:

In some implementations, one or more semiconductor processing tools may deposit a first dielectric layer on a substrate of a semiconductor device. The one or more semiconductor processing tools may deposit a floating gate on the first dielectric layer. The one or more semiconductor processing tools may deposit a second dielectric layer on the floating gate and on the substrate of the semiconductor device. The one or more semiconductor processing tools may deposit a first control gate on a first portion of the second dielectric layer. The one or more semiconductor processing tools may deposit a second control gate on a second portion of the second dielectric layer, wherein a third portion of the second dielectric layer is between the first control gate and the floating gate and between the second control gate and the floating gate.