Taiwan Semiconductor Manufacturing Company Limited
CAVITY RESONATOR FOR ENHANCING RADIO-FREQUENCY PERFORMANCE AND METHODS FOR FORMING THE SAME

Abstract:

Devices and methods of manufacture for a graduated, "step-like," semiconductor structure having two or more resonator trenches. A semiconductor structure may comprise a first resonator and a second resonator. The first resonator comprising a first metallic resonance layer and a capping plate having a bottom surface that is a first distance from a distal end of the first metallic resonance layer 128. The second resonator comprising a second metallic resonance layer and the capping plate, in which the bottom surface is a second distance from a from a distal end of the second metallic resonance layer 128b, and in which first distance is different from the second distance.