Taiwan Semiconductor Manufacturing Company Limited
 Systems and methods for protecting a semiconductor device
 Last updated:
Abstract:
Circuits and methods for protecting a device are provided. A first device to be protected includes a gate dielectric of a first thickness. A second device includes a gate dielectric of a second thickness that is less than the first thickness. A gate is shared by the first device and the second device.
Status: 
 
                        Grant 
Type: 
 Utility
Filling date: 
 15 Apr 2020
Issue date: 
15 Jun 2021