Taiwan Semiconductor Manufacturing Company Limited
Systems and methods for protecting a semiconductor device
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Abstract:
Circuits and methods for protecting a device are provided. A first device to be protected includes a gate dielectric of a first thickness. A second device includes a gate dielectric of a second thickness that is less than the first thickness. A gate is shared by the first device and the second device.
Status:
Grant
Type:
Utility
Filling date:
15 Apr 2020
Issue date:
15 Jun 2021