Taiwan Semiconductor Manufacturing Company Limited
Memory device with a fuse protection circuit
Last updated:
Abstract:
A memory device includes a memory circuit and a fuse protection circuit. The memory circuit includes a program line and a fuse. The program line is configured to receive a program voltage for programming the fuse. The fuse protection circuit is coupled to the memory circuit and is configured to prevent unintentional programming of the fuse.
Status:
Grant
Type:
Utility
Filling date:
8 Sep 2020
Issue date:
27 Apr 2021