Taiwan Semiconductor Manufacturing Company Limited
Semiconductor arrangement and method of manufacture
Last updated:
Abstract:
A method for forming a semiconductor arrangement includes forming a fin. A diffusion process is performed to diffuse a first dopant into the channel region of the fin. A first gate electrode is formed over the channel region of the fin after the first dopant is diffused into the channel region of the fin.
Status:
Grant
Type:
Utility
Filling date:
6 Jun 2019
Issue date:
13 Apr 2021