Taiwan Semiconductor Manufacturing Company Limited
Semiconductor arrangement and method of manufacture

Last updated:

Abstract:

A method for forming a semiconductor arrangement includes forming a fin. A diffusion process is performed to diffuse a first dopant into the channel region of the fin. A first gate electrode is formed over the channel region of the fin after the first dopant is diffused into the channel region of the fin.

Status:
Grant
Type:

Utility

Filling date:

6 Jun 2019

Issue date:

13 Apr 2021