Taiwan Semiconductor Manufacturing Company Limited
 Semiconductor arrangement and method of manufacture
 Last updated:
Abstract:
A method for forming a semiconductor arrangement includes forming a fin. A diffusion process is performed to diffuse a first dopant into the channel region of the fin. A first gate electrode is formed over the channel region of the fin after the first dopant is diffused into the channel region of the fin.
Status: 
 
                        Grant 
Type: 
 Utility
Filling date: 
 6 Jun 2019
Issue date: 
13 Apr 2021