Taiwan Semiconductor Manufacturing Company Limited
 Low static current semiconductor device
 Last updated:
Abstract:
Devices are described herein for a low static current semiconductor device. A semiconductor device includes a power transistor and a driving circuit coupled to and configured to drive the power transistor. The driving circuit includes a first stage having an enhancement-mode high-electron-mobility transistor (HEMT) and a second stage that is coupled between the first stage and the power transistor and that includes a pair of enhancement-mode HEMTs.
Status: 
 
                        Grant 
Type: 
 Utility
Filling date: 
 26 Mar 2020
Issue date: 
16 Feb 2021