Taiwan Semiconductor Manufacturing Company Limited
Low static current semiconductor device

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Abstract:

Devices are described herein for a low static current semiconductor device. A semiconductor device includes a power transistor and a driving circuit coupled to and configured to drive the power transistor. The driving circuit includes a first stage having an enhancement-mode high-electron-mobility transistor (HEMT) and a second stage that is coupled between the first stage and the power transistor and that includes a pair of enhancement-mode HEMTs.

Status:
Grant
Type:

Utility

Filling date:

24 Apr 2019

Issue date:

13 Oct 2020