Taiwan Semiconductor Manufacturing Company Limited
Low static current semiconductor device
Last updated:
Abstract:
Devices are described herein for a low static current semiconductor device. A semiconductor device includes a power transistor and a driving circuit coupled to and configured to drive the power transistor. The driving circuit includes a first stage having an enhancement-mode high-electron-mobility transistor (HEMT) and a second stage that is coupled between the first stage and the power transistor and that includes a pair of enhancement-mode HEMTs.
Status:
Grant
Type:
Utility
Filling date:
24 Apr 2019
Issue date:
13 Oct 2020