Taiwan Semiconductor Manufacturing Company Limited
Memory device with a fuse protection circuit

Last updated:

Abstract:

A memory device includes a memory circuit and a fuse protection circuit. The memory circuit includes a program line and a fuse. The program line is configured to receive a program voltage for programming the fuse. The fuse protection circuit is coupled to the memory circuit and is configured to prevent unintentional programming of the fuse.

Status:
Grant
Type:

Utility

Filling date:

26 Mar 2020

Issue date:

13 Oct 2020