Taiwan Semiconductor Manufacturing Company Limited
Devices and methods for writing to a memory cell of a memory
Last updated:
Abstract:
A method for writing to a memory is disclosed. The method includes generating a write current that flows to a memory cell of the memory, generating a mirror current that mirrors the write current, and inhibiting application of a write voltage to the memory cell of the memory based on the mirror current. A device that performs the method is also disclosed. A memory that includes the device is also disclosed.
Status:
Grant
Type:
Utility
Filling date:
1 Jul 2019
Issue date:
6 Oct 2020