Taiwan Semiconductor Manufacturing Company Limited
Semiconductor device and method for manufacturing the same

Abstract:

A semiconductor device having a composite barrier structure over a transistor and a method for manufacturing the same is disclosed. The method includes a series of steps including: forming a transistor having source/drain regions within a fin structure and adjacent to a gate structure across over the fin structure; forming first source/drain contacts right above and electrically connected to the source/drain regions; depositing a composite barrier structure over the transistor and the first source/drain contacts; and forming second source/drain contacts right above and electrically connected to the first source/drain contacts. The method further includes depositing a second etch-stop layer before depositing the composite barrier structure and forming second source/drain contacts right above and electrically connected to the first source/drain contacts. The method also includes forming contacts over and electrically connected to the second source/drain contacts.