Taiwan Semiconductor Manufacturing Company Limited
Systems and methods for protecting a semiconductor device
Last updated:
Abstract:
Circuits and methods for protecting a device are provided. A first device to be protected includes a gate dielectric of a first thickness. A second device includes a gate dielectric of a second thickness that is less than the first thickness. A gate is shared by the first device and the second device.
Status:
Grant
Type:
Utility
Filling date:
16 Nov 2018
Issue date:
28 Apr 2020