Taiwan Semiconductor Manufacturing Company Limited
Systems and methods for protecting a semiconductor device

Last updated:

Abstract:

Circuits and methods for protecting a device are provided. A first device to be protected includes a gate dielectric of a first thickness. A second device includes a gate dielectric of a second thickness that is less than the first thickness. A gate is shared by the first device and the second device.

Status:
Grant
Type:

Utility

Filling date:

16 Nov 2018

Issue date:

28 Apr 2020