Taiwan Semiconductor Manufacturing Company Limited
Memory device for generating word line signals having varying pulse widths
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Abstract:
A memory device includes a plurality of memory cells, a plurality of word lines, and a word line driver. The word lines are respectively coupled to the memory cells. The word line driver is configured to respectively drive the word lines with word line signals that have varying pulse widths.
Status:
Grant
Type:
Utility
Filling date:
29 Apr 2019
Issue date:
24 Dec 2019