Taiwan Semiconductor Manufacturing Company Limited
Semiconductor device including a semiconductor sheet interconnecting a source region and a drain region
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Abstract:
A semiconductor device includes a substrate, a first source/drain (S/D) region, a second S/D region, and a semiconductor sheet. The first S/D region is disposed on the substrate. The second S/D region is disposed above the first S/D region. The semiconductor sheet interconnects the first and second S/D regions and includes a plurality of turns. A method for fabricating the semiconductor device is also disclosed.
Status:
Grant
Type:
Utility
Filling date:
12 Jul 2017
Issue date:
30 Jul 2019