Taiwan Semiconductor Manufacturing Company Limited
NON-VOLATILE STATIC RANDOM ACCESS MEMORY (nvSRAM) WITH MULTIPLE MAGNETIC TUNNEL JUNCTION CELLS

Abstract:

Disclosed herein are related to an integrated circuit including multiple magnetic tunneling junction (MTJ) cells coupled to a static random access memory (SRAM). In one aspect, the integrated circuit includes a SRAM having a first port and a second port, and a set of pass transistors coupled to the first port of the SRAM. In one aspect, the integrated circuit includes a set of MTJ cells, where each of the set of MTJ cells is coupled between a select line and a corresponding one of the set of pass transistors.