Taiwan Semiconductor Manufacturing Company Limited
 SEMICONDUCTOR DEVICE WITH SPACERS FOR SELF ALIGNED VIAS
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Abstract:
A semiconductor device includes a first conductive structure. The semiconductor device includes a first dielectric structure. The semiconductor device includes a second conductive structure. The first dielectric structure is positioned between a first surface of the first conductive structure and a surface of the second conductive structure. The semiconductor device includes an etch stop layer overlaying the first conductive structure. The semiconductor device includes a first spacer structure overlaying the first dielectric structure. The semiconductor device includes a second dielectric structure overlaying the first spacer structure and the etch stop layer.
Status: 
 
                        Application 
Type: 
 Utility
Filling date: 
 31 Oct 2019
Issue date: 
6 May 2021